No. | Promotion date | PhD student | Title of thesis |
1 | 16 April 1975 | J.G. de Wit | An ENDOR study of the divacancy in silicon |
2 | 15 February 1978 | E.G. Sieverts | An EPR and ENDOR study on defects in silicon |
3 | 26 March 1980 | R.H. van der Linde | Reorientation of the divacancy in sllicon and its spin-lattice relaxation time: An EPR experiment |
4 | 6 May 1981 | S.H.Muller | An EPR study on clustering of iron and of oxygen in silicon |
5 | 15 January 1986 | M. Sprenger | Magnetic resonance studies on defects in silicon |
6 | 15 October 1986 | D.A. van Wezep | A magnetic resonance study of 3d transition metals and thermal donors in silicon |
7 | 18 February 1987 | J.J. van Kooten | A magnetic resonance and photoluminescence study on point defects in silicon |
8 | 30 June 1988 | R. van Kemp | Magnetic resonance studies of the oxygen-vacancy complex and interstitial chromium in silicon |
9 | 20 June 1989 | A.B. van Oosten | Electronic structure of deep impurity centers in silicon |
10 | 17 January 1991 | H.H.P.Th. Bekman | Oxygen aggregation in semiconductors - Study by magnetic resonance |
11 | 5 June 1992 | B.J. Heijmink Liesert | Photoluminescence and optical double-resonance studies of selected defects in electronic materials |
12 | 18 February 1993 | S.J.C.H.M. van Gisbergen | Magnetic resonance studies of 3d transition metal impurities in compound semiconductors |
13 | 25 February 1993 | H.E. Altink | Magnetic resonance study of zinc-related defects in silicon with optimized EPR spectrometer |
14 | 26 April 1993 | Nguyen Tien Son | Noble and transition metals in silicon - A study by magnetic resonance |
15 | 14 June 1994 | P. Stallinga | Investigation of selected paramagnetic centers in semiconductors |
16 | 20 February 1996 | Yu.V. Martynov | Paramagnetic centers in silicon studied by advanced EPR and ENDOR spectroscopy |
17 | 20 May 1997 | Pham Nguyen Hai | Deep-level defects in silicon studied by DLTS and EPR spectroscopy |
18 | 7 January 1998 | I.S. Zevenbergen | Spectroscopy of selected hydrogen-related centers in silicon |
19 | 23 February 1998 | I. Tsimperidis | Photonic processes in semiconductors investigated by light emission |
20 | 11 February 2000 | Du Thi Xuan Thao | Photoluminescence spectroscopy on erbium-doped and porous silicon |
21 | 10 May 2001 | I. Gersdorf | Spectroscopic analysis of erbium-doped silicon and ytterbium-doped indium phosphide |
22 | 26 november 2001 | Pham Thanh Huy | Hydrogen interaction with impurities in silicon |
23 | 10 June 2004 | B.J. Pawlak | Investigation of defects in bulk and nanocrystalline silicon |
No. | Examination date | Master student | Title of thesis |
1 | September 1966 | J.P. Woerdman | Electrische en paramagnetische eigenschappen van Li in Si, voor en na bestralen met snelle electronen |
2 | December 1967 | J.J. Goedbloed | Gamma-bestraling van geïsoleerd lithium-gecompenseerd siicium |
3 | June 1968 | P.G. Schipper | Stralingsbeschadiging in n-type silicium door snelle electronen |
4 | September 1969 | J.G. de Wit | Ionenimplantatie en channeling in silicium |
5 | 24 June 1971 | H.M. Heijne | Onderzoek aan dunne lagen |
6 | 1972 | W.H. Kool | Gamma irradiation of lithium-drifted silicon |
7 | 27 september 1972 | W.E. van der Vliet | Lithium-boron ion pairing in silicon |
8 | 9 May 1973 | K. Benjamens | Het bepalen van energienivo's van roosterfouten in geïmplanteerd silicium door middel van TSC metingen |
9 | April 1974 | A. van der Wiel | De spin-roosterrelaxatietijd van de dubbelvacature in siliicum |
10 | May 1975 | W. van der Schaaf | TSC metingen aan B++ geïmplanterd silicium |
11 | 1975 | C.L. Vlaanderen | ESR-spectra van zwaar met phosphor verontreinigd silicium |
12 | 1975 | J.C. Wolfrat | Theorie van electron paramagnetische resonantie met toepassing op de positieve dubbelvacature in silicium |
13 | 1975 | S.H. Muller | De K-band spectrometer |
14 | 26 October 1977 | M. Sprenger | De vorming van donorcentra in zuurstofhoudend silicium door warmtebehandeling: een ESR studie |
15 | 1978 | P.M. Kuin | Elektronspinresonantie aan n-type germanium |
16 | 23 May 1979 | H.G. Arnold | ESR aan ijzer in silicium I |
17 | 23 May 1979 | J.J. de Graaf | ESR aan ijzer in silicium II |
18 | 13 June 1979 | P.J.J. Kok | ESR metingen aan diamant met de X-band spectrometer |
19 | 10 March 1982 | R. van Kemp | A search by EPR for hydrogen and shallow acceptors in silicon |
20 | 22 June 1983 | C. Jansen | ESR metingen aan ijzer en antimoon in silicium |
21 | 14 February 1984 | G.A. Weller | Het electron-spin-resonantie gedrag van ijzer-centra in silicium |
22 | 27 March 1984 | G.M. Tuynman | Spin-Hamiltonians: theory and experiment |
23 | 14 May 1985 | G.R. Meijer | Infra-rood spectroscopie aan zuurstof-houdend silicium |
24 | 25 June 1985 | D. van Kootwijk | I. Luminescentie aan ingediffundeerde centra in silicium II. Het ENDOR gedrag van vanadium-centra in silicium |
25 | 22 April 1986 | A.J. Blaakmeer | The effect of ion-implantation on the formation of heat-treatment centres in acceptor-doped oxygen rich silicon |
26 | 24 June 1986 | H.H.P.Th. Bekman | ESR measurements on heat-treated oxygen-rich silicon |
27 | 3 July 1987 | C.J.E. Jansen | Op zoek naar NL30 |
28 | 31 August 1987 | W. Harsono | Het electron spin resonantie gedrag van borium in silicium |
29 | 31 August 1988 | R.J. de Geus | Infrared absorption measurments on oxygen rich silicon |
30 | 22 November 1988 | P. Stallinga | Magnetishe resonantie en digitale lock-in |
31 | 9 January 1990 | M. de Langen | Optische meettechnieken en hun toepassing bij onderzoek aan halfgeleiders |
32 | 24 April 1990 | I.F.A. Hidayat | I. Bistabiliteit van thermische donoren in silicium en germanium II. Het "Savitzky-Golay" digital smoothing filter |
33 | 30 August 1991 | L. Rozing | EPRLIB: De software bibliotheek Deel I. De fysica Deel II. De programmatuur |
34 | 16 January 1993 | B. van Dijk | EPR studie van zink gerelateerde defecten in silicium |
35 | 25 September 1995 | I.H. Hagmusa | Photoluminescence spectroscopy of a copper center in silicon |