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Doctor Thesis, Books, Monographies, Journal and Conference Papers

Doctor Thesis (PhD Thesis)  
Author:
Title:
Subtitle:
Reference:
C.A.J. Ammerlaan
"Lithium Drifted p-i-n Junctions in Silicon"
"Particle Identification and Irradiation Effects"
Proefschrift Universiteit van Amsterdam, 1967, pp. 1-130
Paper T001

Books (Conference Proceedings)
1 C.A.J. Ammerlaan, editor,
"Defects in Semiconductors",
North-Holland Publishing Company, Amsterdam, 1983, pp. 1-661.
2 C.A.J. Ammerlaan, A. Chantre and P. Wagner, editors,
"Defects in Silicon",
North-Holland, Amsterdam, 1989, pp. 1-505.
3 C.A.J. Ammerlaan, F.F. Bekker, J.J.M. Franse, Nguyen Van Hieu and Than Duc Hien, editors, "Semiconductors and Rare Earth Based Materials",
World Scientific, Singapore, 1991, pp. 1-373.
4 C.A.J. Ammerlaan and B. Pajot, editors,
"Shallow-Level Centers in Semiconductors",
World Scientific, Singapore, 1997, pp. 1-534.


Monographies  
1 C.A.J. Ammerlaan,
"Paramagnetic centres in diamond",
Landolt-Börnstein, New Series, Volume 22 Semiconductors, Subvolume b Impurities and Defects in Group IV Elements and III-V Compounds (Springer, Berlin, 1989), pp. 177-206.
Paper M001
2 C.A.J. Ammerlaan,
"Paramagnetic centres in silicon",
Landolt-Börnstein, New Series, Volume 22 Semiconductors, Subvolume b Impurities and Defects in Group IV Elements and III-V Compounds (Springer, Berlin, 1989), pp. 365-381.
Paper M002
3 C.A.J. Ammerlaan and J.R. Niklas,
"Electron-nuclear double resonance",
Hyperfine Interactions of Defects in Semiconductors (Elsevier, Amsterdam, 1992), pp. 257-284.
Paper M003
4 C.A.J. Ammerlaan and P.T. Huy,
"Characterisation of hydrogen and hydrogen-related centres in crystalline silicon by magnetic-resonance spectroscopy",
Solid State Phenomena 85–86, 353-413 (2002).
Paper M004
5 C.A.J. Ammerlaan,
"Paramagnetic centers in diamond",
Landolt–Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series, (Springer Verlag, Berlin, 2002), volume III41A2α, pp. 6–76.
Paper M005
6 C.A.J. Ammerlaan,
"Paramagnetic centers in silicon",
Landolt–Börnstein, Numerical Data and Functional Relationships in Science and Technology, New Series, (Springer Verlag, Berlin, 2002), volume III41A2α, pp. 244–308.
Paper M006
7 C.A.J. Ammerlaan,
"Hydrogen",
Silicon – Evolution and Future of a Technology, (Springer, Berlin, Heidelberg, 2004), pp. 261-290.
Paper M007

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Journal papers
1 C.A.J. Ammerlaan and K. Mulder,
"The preparation of lithium-drifted semiconductor nuclear particle detectors",
Nuclear Instruments and Methods 21, 97-100 (1963).
Paper J001
2 C.A.J. Ammerlaan, R.F. Rumphorst and L.A.Ch. Koerts,
"Particle identification by pulse shape discrimination in the p-i-n type semiconductor detector",
Nuclear Instruments and Methods 22, 189-200 (1963).
Paper J002
3 C.A.J. Ammerlaan,
"Recovery behavior of Si(Li) junctions after gamma irradiation",
Journal of Applied Physics 39, 6023-6028 (1968).
Paper J003
4 C.A.J. Ammerlaan and W.E. van der Vliet,
"Lithium-boron ion pairing in silicon",
Physical Review Letters 23, 470-472 (1969).
Paper J004
5 W.H. Kool, J.J. Goedbloed and C.A.J. Ammerlaan,
" Gamma irradiation of lithium-drifted silicon",
Journal of Applied Physics 42, 2024-2030 (1971).
Paper J005
6 C.A.J. Ammerlaan and W.E. van der Vliet,
" The impurities lithium and boron in silicon: ion pairing and ground state degeneracy",
Crystal Lattice Defects 3, 47-53 (1972).
Paper J006
7 C.A.J. Ammerlaan and G.D. Watkins,
"Electron-paramagnetic-resonance detection of optically induced divacancy alignment in silicon", Physical Review B 5, 3988-3993 (1972).
Paper J007
8 C.A.J. Ammerlaan,
"The use of ENDOR in solid-state spectroscopy",
Atomic Energy Review 12, 743-761 (1974).
Paper J008
9 C.A.J. Ammerlaan and A. van der Wiel,
"The divacancy in silicon: spin-lattice relaxation and passage effects in electron paramagnetic resonance",
Journal of Magnetic Resonance 21, 387-396 (1976).
Paper J009
10 J.G. de Wit, E.G. Sieverts and C.A.J. Ammerlaan,
"Divacancy in silicon: hyperfine interactions from electron-nuclear double resonance measurements", Physical Review B 14, 3494-3503 (1976).
Paper J010
11 S.H. Muller, M. Sprenger, E.G. Sieverts and C.A.J. Ammerlaan,
"EPR spectra of heat-treatment centers in oxygen-rich silicon",
Solid State Communications 25, 987-990 (1978).
Paper J011
12 C.A.J. Ammerlaan and J.C. Wolfrat,
"Extended-Hückel-theory calculations for the positive divacancy in silicon",
Physica Status Solidi (b) 89, 85-94 (1978).
Paper J012
13 C.A.J. Ammerlaan and J.C. Wolfrat,
"Magnetic dipole-dipole hyperfine integrals for Slater-type orbitals",
Physica Status Solidi (b) 89, 541-546 (1978).
Paper J013
14 E.G. Sieverts, S.H. Muller and C.A.J. Ammerlaan,
"Divacancy in silicon:
hyperfine interactions from electron-nuclear double-resonance measurements. II",
Physical Review B 18, 6834-6848 (1978).
Paper J014
15 R.H. van der Linde and C.A.J. Ammerlaan,
"Optically induced divacancy reorientations in silicon",
Semiconductors and Insulators 4, 139-150 (1978).
Paper J015
16 E.G. Sieverts, S.H. Muller and C.A.J. Ammerlaan,
"On the production of paramagnetic defects in silicon by electron irradiation",
Solid State Communications 28, 221-225 (1978).
Paper J016
17 L.J. van Ruyven and C.A.J. Ammerlaan,
"Electron trapping in neutron transmutation doped silicon",
Applied Physics Letters 34, 632-634 (1979).
Paper J017
18 C. Weigel and C.A.J. Ammerlaan,
"Iterative EHT calculations for the positive divacancy in silicon",
Physica Status Solidi (b) 94, 505-16 (1979).
Paper J018
19 E.A. Burgemeister and C.A.J. Ammerlaan,
"High-temperature thermal conductivity of electron-irradiated diamond",
Physical Review B 21, 2499-2505 (1980).
Paper J019
20 C.A.J. Ammerlaan and E.A. Burgemeister,
"Reorientations of nitrogen in diamond",
Industrial Diamond Review 40, 128-132 (1980).
Paper J020
21 E.A. Burgemeister, C.A.J. Ammerlaan and G. Davies,
"Thermal and optical measurements on vacancies in type IIa diamond",
Journal of Physics C: Solid State Physics 13, L691-L695 (1980).
Paper J021
22 C.A.J. Ammerlaan and E.A. Burgemeister,
"Reorientation of nitrogen in type-Ib diamond by thermal excitation and tunneling",
Physical Review Letters 47, 954-957 (1981).
Paper J022
23 R.L. Kleinhenz, Y.H. Lee, J.W. Corbett, E.G. Sieverts, S.H. Muller and C.A.J. Ammerlaan,
"EPR observation of an Au-Fe complex in silicon. I. Experimental data",
Physica Status Solidi (b) 108, 363-371 (1981).
Paper J023
24 E.G. Sieverts, S.H. Muller, C.A.J. Ammerlaan, R.L. Kleinhenz and J.W. Corbett,
"EPR observation of an Au-Fe Complex in silicon. II. Electronic structure",
Physica Status Solidi (b) 109, 83-94 (1982).
Paper J024
25 S.H. Muller, G.M. Tuynman, E.G. Sieverts and C.A.J. Ammerlaan,
"Electron paramagnetic resonance on iron-related centers in silicon",
Physical Review B 25, 25-40 (1982).
Paper J025
26 E.G. Sieverts, S.H. Muller, C.A.J. Ammerlaan and E.R. Weber,
"Hyperfine interactions from EPR of iron in silicon",
Solid State Communications 47, 631-634 (1983).
Paper J026
27 J.J. van Kooten, G.A. Weller and C.A.J. Ammerlaan,
"Electron paramagnetic resonance on iron-acceptor pairs in silicon",
Physical Review B 30, 4564-4570 (1984).
Paper J027
28 M. Sprenger, E.G. Sieverts, S.H. Muller and C.A.J. Ammerlaan,
"Electron paramagnetic resonance of a nitrogen-related centre in electron irradiated silicon",
Solid State Communications 51, 951-955 (1984).
Paper J028
29 C.A.J. Ammerlaan and R. van Kemp,
"Magnetic resonance spectroscopy in semiconducting diamond",
Journal of Physics C: Solid State Physics 18, 2623-2629 (1985).
Paper J029
30 D.A. van Wezep, R. van Kemp, E.G. Sieverts and C.A.J. Ammerlaan,
"Electron-nuclear double resonance of titanium in silicon: 29Si ENDOR",
Physical Review B 32, 7129-7138 (1985).
Paper J030
31 D.A. van Wezep, T. Gregorkiewicz, E.G. Sieverts and C.A.J. Ammerlaan,
"Spin delocalization of interstitial iron in silicon",
Physical Review B 34, 4511-4520 (1986).
Paper J031
32 M. Sprenger, S.H. Muller, E.G. Sieverts and C.A.J. Ammerlaan,
"Vacancy in silicon: hyperfine interactions from electron-nuclear double resonance measurements", Physical Review B 35, 1566-1581 (1987).
Paper J032
33 M. Sprenger, R. van Kemp, E.G. Sieverts and C.A.J. Ammerlaan,
"Electronic and atomic structure of the boron-vacancy complex in silicon",
Physical Review B 35, 1582-1592 (1987).
Paper J033
34 T. Gregorkiewicz, D.A. van Wezep, H.H.P.Th. Bekman and C.A.J. Ammerlaan,
"EPR studies of heat-treatment centers in p-type silicon",
Physical Review B 35, 3810-3817 (1987).
Paper J034
35 J.J. van Kooten, D. van Kootwijk and C.A.J. Ammerlaan,
"Self-ENDOR of vanadium in silicon",
Journal of Physics C: Solid State Physics 20, 841-847 (1987).
Paper J035
36 J.J. van Kooten, T. Gregorkiewicz, A.J. Blaakmeer and C.A.J. Ammerlaan,
"Photoluminescence on oxygen-rich acceptor-doped silicon",
Journal of Physics C: Solid State Physics 20, 2183-2191 (1987).
Paper J036
37 T. Gregorkiewicz, D.A. van Wezep, H.H.P.Th. Bekman and C.A.J. Ammerlaan,
"Oxygen incorporation in thermal-donor centers in silicon",
Physical Review Letters 59, 1702-1705 (1987).
Paper J037
38 R. van Kemp, E.G. Sieverts and C.A.J. Ammerlaan,
"Electron-nuclear double resonance of interstitial chromium in silicon",
Physical Review B 36, 3528-3541 (1987).
Paper J038
39 H.H.P.Th. Bekman, T. Gregorkiewicz, D.A. van Wezep and C.A.J. Ammerlaan,
"Electron-paramagnetic-resonance study of heat-treatment centers in n-type silicon",
Journal of Applied Physics 62, 4404-4405 (1987).
Paper J039
40 J.J. van Kooten, E.G. Sieverts and C.A.J. Ammerlaan,
"Electron paramagnetic resonance of an Fe-Fe pair in silicon",
Solid State Communications 64, 1489-1494 (1987).
Paper J040
41 A.B. van Oosten and C.A.J. Ammerlaan,
"Paramagnetic resonance of a Se-Al complex in silicon",
Solid State Communications 65, 1039-1044 (1988).
Paper J041
42 D.A. van Wezep and C.A.J. Ammerlaan,
"Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR",
Physical Review B 37, 7268-7275 (1988).
Paper J042
43 J.J. van Kooten, E.G. Sieverts and C.A.J. Ammerlaan,
"Electron-nuclear double resonance of interstitial positively charged iron in silicon",
Physical Review B 37, 8949-8957 (1988).
Paper J043
44 H.H.P.Th. Bekman, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Si-NL10: paramagnetic acceptor state of the silicon thermal donor",
Physical Review Letters 61, 227-230 (1988).
Paper J044
45 T. Gregorkiewicz, H.H.P.Th. Bekman and C.A.J. Ammerlaan,
"Microscopic structure of the NL10 heat-treatment center in silicon: study by electron-nuclear double resonance",
Physical Review B 38, 3998-4015 (1988).
Paper J045
46 A.B. van Oosten and C.A.J. Ammerlaan,
"Sulfur pair in silicon: 33S electron-nuclear double resonance",
Physical Review B 38, 13291-13296 (1988).
Paper J046
47 R. van Kemp, E.G. Sieverts and C.A.J. Ammerlaan,
"Oxygen-vacancy complex in silicon. I. 29Si electron-nuclear double resonance",
Physical Review B 40, 4037-4053 (1989).
Paper J047
48 R. van Kemp, M. Sprenger, E.G. Sieverts and C.A.J. Ammerlaan,
"Oxygen-vacancy complex in silicon. II. 17O electron-nuclear double resonance",
Physical Review B 40, 4054-4061 (1989).
Paper J048
49 H.H.P.Th. Bekman, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Silicon electron-nuclear double-resonance study of the NL10 heat-treatment center",
Physical Review B 39, 1648-1658 (1989).
Paper J049
50 C.A.J. Ammerlaan and A.B. van Oosten,
"Electronic structure of platinum in silicon",
Physica Scripta T 25, 342-347 (1989).
Paper J050
51 L.S. Vlasenko, Nguyên Tiên Són, A.B. van Oosten, C.A.J. Ammerlaan, A.A. Lebedev, E.S. Taptygov and V.A. Khramtsov,
"Electron paramagnetic resonance of nickel in silicon. I. Identification of spectrum",
Solid State Communications 73, 393-398 (1990).
Paper J051
52 E.G. Sieverts, M. Sprenger and C.A.J. Ammerlaan,
"Chain character of vacancy-type defects in silicon",
Physical Review B 41, 8630-8642 (1990).
Paper J052
53 T. Gregorkiewicz, H.H.P.Th. Bekman and C.A.J. Ammerlaan,
"Comparative study of Si-NL8 and Si-NL10 thermal-donor-related EPR centers",
Physical Review B 41, 12628-12636 (1990).
Paper J053
54 H.E. Altink, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Magnetic resonance spectroscopy of zinc doped silicon",
Solid State Communications 75, 115-120 (1990).
Paper J054
55 A.A. Ezhevski and C.A.J. Ammerlaan,
"Electron spin resonance of FeFeB complexes in silicon",
Soviet Physics Semiconductors 24, 851-853 (1990).
Paper J055
56 H.H.P.Th. Bekman, T. Gregorkiewicz, I.F.A. Hidayat, C.A.J. Ammerlaan and P. Clauws,
"Metastable thermal donor states in germanium: identification by electron paramagnetic resonance", Physical Review B 42, 9802-9809 (1990).
Paper J056
57 B.J. Heijmink Liesert, M. Godlewski, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Optically detected magnetic resonance studies of neutron-transmutation-doped GaP",
Journal of Applied Physics 69, 689-694 (1991).
Paper J057
58 B.J. Heijmink Liesert, M. Godlewski, A. Stapor, T. Gregorkiewicz, C.A.J. Ammerlaan, J. Weber,
M. Moser and F. Scholz,
"Optically detected microwave-induced impact ionization of ytterbium bound excitons in InP",
Applied Physics Letters 58, 2237-2239 (1991).
Paper J058
59 B.J. Heijmink Liesert, M. Godlewski, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Neutron transmutation doping of GaP: optical studies",
Applied Surface Science 50, 245-248 (1991).
Paper J059
60 S.J.C.H.M. van Gisbergen, M. Godlewski, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Interstitial Mn as a new donor in GaP and GaAs: an EPR study",
Applied Surface Science 50, 273-276 (1991).
Paper J060
61 S.J.C.H.M. van Gisbergen, M. Godlewski, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Magnetic-resonance studies of interstitial Mn in GaP and GaAs",
Physical Review B 44, 3012-3019 (1991).
Paper J061
62 N. T. Son, A.B. van Oosten and C.A.J. Ammerlaan,
"Electron paramagnetic resonance of nickel in silicon. II. Hyperfine and quadrupole interactions",
Solid State Communications 80, 439-445 (1991).
Paper J062
63 B.J. Heijmink Liesert, M. Godlewski, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Optically detected Auger recombinations in erbium- and ytterbium-doped InP",
Applied Physics Letters 59, 3279-3281 (1991).
Paper J063
64 C.A.J. Ammerlaan, S.J.C.H.M. van Gisbergen, N.T. Son and T. Gregorkiewicz,
"Nuclear interactions of defects in semiconductors - magnetic resonance measurements",
Nuclear Instruments and Methods in Physics Research B63, 154-162 (1992).
Paper J064
65 A.A. Ezhevskii, N.T. Son and C.A.J. Ammerlaan,
"Electron paramagnetic resonance of FeFeAl complexes in silicon",
Solid State Communications 81, 955-959 (1992).
Paper J065
66 T. Gregorkiewicz, H.H.P.Th. Bekman, C.A.J. Ammerlaan, W. Knap, L.C. Brunel and G. Martinez, "High-resolution EPR spectroscopy of the Si-NL10 thermal donor",
Physical Review B 45, 5873-5878 (1992).
Paper J066
67 T. Gregorkiewicz, W. Knap, H.H.P.Th. Bekman, L.C. Brunel, C.A.J. Ammerlaan and G. Martinez, "High-field EPR spectroscopy of thermal donors in silicon",
Physica B 177, 476-480 (1992).
Paper J067
68 B.J. Heijmink Liesert, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Photoluminescence studies on thermal donors in boron- and aluminum-doped silicon",
Physical Review B 46, 2034-2040 (1992).
Paper J068
69 N.T. Son, V.E. Kustov, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Electron-paramagnetic-resonance identification of silver centers in silicon",
Physical Review B 46, 4544-4550 (1992).
Paper J069
70 T. Gregorkiewicz, H.H.P.Th. Bekman and C.A.J. Ammerlaan,
"Aluminum incorporation in the Si-NL10 thermal donor",
Physical Review B 46, 4582-4589 (1992).
Paper J070
71 H.E. Altink, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Sensitive electron paramagnetic resonance spectrometer for studying defects in semiconductors", Review of Scientific Instruments 63, 5742-5749 (1992).
Paper J071
72 N.T. Son, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Paramagnetic state of the isolated gold impurity in silicon",
Physical Review Letters 69, 3185-3188 (1992).
Paper J072
73 N.T. Son, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Magnetic resonance spectroscopy in silver-doped silicon",
Journal of Applied Physics 73, 1797-1801 (1993).
Paper J073
74 B.J. Heijmink Liesert, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Photoluminescence of silicon thermal donors",
Physical Review B 47, 7005-7012 (1993).
Paper J074
75 S.J.C.H.M. van Gisbergen, M. Godlewski, R.R. Galazka, T. Gregorkiewicz, C.A.J. Ammerlaan and N.T. Khoi,
"Optically detected magnetic resonance of Cd0.905Mn0.095Te",
Physical Review B 48, 11767-11771 (1993).
Paper J075
76 P. Stallinga, T. Gregorkiewicz, C.A.J. Ammerlaan and Yu.V. Gorelkinskii,
"Electron paramagnetic resonance of molecular hydrogen in silicon",
Physical Review Letters 71, 117-120 (1993).
Paper J076
77 P. Stallinga, T. Gregorkiewicz, C.A.J. Ammerlaan and Yu.V. Gorelkinskii,
"Electron paramagnetic resonance study of the NL51 spectrum in hydrogen-implanted silicon",
Solid State Communications 90, 401-404 (1994).
Paper J077
78 S.J.C.H.M. van Gisbergen, A.A. Ezhevskii, N.T. Son, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Ligand ENDOR on substitutional manganese in GaAs",
Physical Review B 49, 10999-11004 (1994).
Paper J078
79 M. Höhne, U. Juda, Yu.V. Martynov, T. Gregorkiewicz, C.A.J. Ammerlaan and L.S. Vlasenko,
"EPR spectroscopy of platinum-hydrogen complexes in silicon",
Physical Review B 49, 13423-13429 (1994).
Paper J079
80 P. Stallinga, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Electron paramagnetic resonance of molecular hydrogen in silicon",
Physical Review Letters 73, 1457 (1994).
Paper J080
81 I. Tsimperidis, T. Gregorkiewicz, C.A.J. Ammerlaan, M. Godlewski, F. Scholz and B. Lambert,
"Role of electron traps in the excitation and de-excitation mechanism of Yb3+ in InP",
Journal of Applied Physics 77, 1523-1530 (1995).
Paper J081
82 Yu.V. Martynov, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Role of hydrogen in the formation and structure of the Si-NL10 thermal donor",
Physical Review Letters 74, 2030-2033 (1995).
Paper J082
83 I.S. Zevenbergen, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Electron-paramagnetic-resonance identification of hydrogen-passivated sulfur centers in silicon", Physical Review B 51, 16746-16749 (1995).
Paper J083
84 L.S. Vlasenko, Yu.V. Martynov, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Electron paramagnetic resonance versus spin-dependent recombination: excited triplet states of structural defects in irradiated silicon",
Physical Review B 52, 1144-1151 (1995).
Paper J084
85 B.Pajot, E. Artacho, C.A.J. Ammerlaan and J.-M. Spaeth,
"Interstitial O isotope effects in silicon",
Journal of Physics: Condensed Matter 7, 7077-7085 (1995).
Paper J085
86 R.C. Newman, J.H. Tucker, N.G. Semaltianos, E.C. Lightowlers, T. Gregorkiewicz, I.S. Zevenbergen and C.A.J. Ammerlaan,
"Infrared absorption in silicon from shallow thermal donors incorporating hydrogen and a link to the NL10 paramagnetic resonance spectrum",
Physical Review B 54, R6803-R6806 (1996).
Paper J086
87 A.A. Ezhevskii, S.J.H.M. van Gisbergen and C.A.J. Ammerlaan,
"Anomalous excitation in the ESR spectrum of the Fe3+ Ion in GaAs",
Semiconductors 30, 552-555 (1996).
Paper J087
88 P.N. Hai, T. Gregorkiewicz, C.A.J. Ammerlaan and D.T. Don,
"Electron-paramagnetic-resonance study of silver-induced defects in silicon",
Physical Review B 56, 4614-4619 (1997).
Paper J088
89 P.N. Hai, T. Gregorkiewicz, C.A.J. Ammerlaan and D.T. Don,
"Copper-related defects in silicon: electron-paramagnetic-resonance identification",
Physical Review B 56, 4620-4625 (1997).
Paper J089
90 A.T. Collins, H. Kanda, J. Isoya, C.A.J. Ammerlaan and J.A. van Wijk,
"Correlation between optical absorption and EPR in high-pressure diamond grown from a nickel solvent catalyst",
Diamond and Related Materials 7, 333-338 (1998).
Paper J090
91 Ruud Dirksen, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Individual thermal donor species studied with high-field magnetic resonance",
Physica Status Solidi (b) 210, 539-543 (1998).
Paper J091
92 B.J. Pawlak, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Confinement effects of phosphorus donors embedded in silicon microcrystals",
Physica Status Solidi (b) 210, 631-634 (1998).
Paper J092
93 C.A.J. Ammerlaan,
"Shallow thermal donors in c-Si",
Properties of Crystalline Silicon, edited by R.N. Hull, EMIS Datareview Series No. 20 (INSPEC,
The Institution of Electrical Engineers, London, UK, 1999), pp. 659-662.
Paper J093
94 C.A.J. Ammerlaan,
"Thermal double donors in c-Si",
Properties of Crystalline Silicon, edited by R.N. Hull, EMIS Datareview Series No. 20 (INSPEC,
The Institution of Electrical Engineers, London, UK, 1999), pp. 663-668.
Paper J094
95 C.A.J. Ammerlaan,
"Double donors and acceptors in c-Si",
Properties of Crystalline Silicon, edited by R.N. Hull, EMIS Datareview Series No. 20 (INSPEC,
The Institution of Electrical Engineers, London, UK, 1999), pp. 669-675.
Paper J095
96 C.A.J. Ammerlaan, D.T.X. Thao, T. Gregorkiewicz and N.A. Sobolev,
"Photoluminescence of erbium-doped silicon: excitation power dependence",
Semiconductors 33, 598-602 (1999) [Fizika i Tekhnika Poluprovodnikov 33, 644-648 (1999)].
Paper J096
97 P.T. Huy, C.A.J. Ammerlaan, T. Gregorkiewicz and D.T. Don,
"Hydrogen passivation of the selenium double donor in silicon - a study by magnetic resonance", Physical Review B 61, 7448-7458 (2000).
Paper J097
98 D.T.X. Thao, C.A.J. Ammerlaan and T. Gregorkiewicz,
"Photoluminescence of erbium-doped silicon: excitation power and temperature dependence",
Journal of Applied Physics 88, 1443-1455 (2000).
Paper J098
99 B.J. Pawlak, T. Gregorkiewicz, C.A.J. Ammerlaan, W. Takkenberg, F.D. Tichelaar and P.F.A. Alkemade,
"Experimental investigation of band structure modification in silicon nanocrystals",
Physical Review B 64, 115308, pp. 1–9 (2001).
Paper J099
100 C.A.J. Ammerlaan and I. de Maat-Gersdorf,
"Zeeman splitting factor of the Er3+ ion in a crystal field",
Applied Magnetic Resonance 21, 13–33 (2001).
Paper J100
101 V.B. Shmagin, B.A. Andreev, A.V. Antonov, Z.F. Krasil'nik, V.P. Kuznetsov, O.A. Kuznetsov, E.A. Uskova, C.A.J. Ammerlaan and G. Pensl,
"Electrically active centers in Si:Er light-emitting layers grown by sublimation molecular-beam epitaxy", Fizika i Tekhnika Poluprovodnikov 36, 178–182 (2002), Semiconductors 36, 171-175 (2002).
Paper J101
102 C.A.J. Ammerlaan,
"g Tensor of Er3+ centers in axial symmetry",
EPR in the 21st Century, (Elsevier, Amsterdam, 2002), pp. 33–38.
Paper J102
103 P.T. Huy and C.A.J. Ammerlaan,
"Magnetic resonance investigation of gold-doped and gold-hydrogen doped silicon",
Physical Review B 66, 165219-1/12 (2002).
Paper J103
104 C.A.J. Ammerlaan, B.J. Pawlak and ISOLDE Collaboration,
"Nuclear conversion of 195AuFe into 195PtFe centers in silicon: observations by magnetic resonance",
Solid State Communications 124, 397-402 (2002).
Paper J104
105 C.A.J. Ammerlaan,
"Energy levels of rare-earth ions in crystal lattice sites of cubic symmetry",
Semiconductor Physics, Quantum Electronics & Optoelectronics 6, 28–31 (2003).
Paper J105
106 C.A.J. Ammerlaan,
"Spin Hamiltonian for the substitutional negative platinum ion in silicon",
Unpublished, pp. 1-36 (2004).
Paper J106
107 D.V. Guseinov, A.A. Ezhevskii and C.A.J. Ammerlaan,
"The contribution of 29Si ligand superhyperfine interactions to the line width of paramagnetic
centers in silicon",
Physica B 381, 164-167 (2006).
Paper J107
108 D.V. Guseinov, A.A. Ezhevskii and C.A.J. Ammerlaan,
"EPR line width and spin-relaxation rates of shallow and deep donors in isotopically controlled
silicon",
Physica B 395, 65-68 (2007).
Paper J108

Papers in Conference Proceedings
1
C.A.J. Ammerlaan, H.J. Hofer and G.W. Rathenau,
"Magnetic measurement of low temperature recovery after plastic deformation",
Solid State Physics in Electronics and Telecommunications (Academic, London, 1960), pp. 231-234.
Paper C001
2 C.A.J. Ammerlaan,
"Shaping of p-i-n detector pulses by RC networks",
Extrait des Mémoires de la Société Royale des Sciences de Liège 10, 211-220 (1964).
Paper C002
3 C.A.J. Ammerlaan,
"Gamma Irradiation of lithium drifted p-i-n junctions in silicon",
Effets des Rayonnements sur les Semiconducteurs (Dunod, Paris, 1965), pp. 295-302.
Paper C003
4 J.G. de Wit and C.A.J. Ammerlaan,
"Electron paramagnetic resonance on divacancies in phosphorus-implanted silicon",
Ion Implantation in Semiconductors (Springer, Berlin, 1971), pp. 39-46.
Paper C004
5 J.G. de Wit, C.A.J. Ammerlaan and E.G. Sieverts,
"An ENDOR study of the divacancy in silicon",
Lattice Defects in Semiconductors 1974 (Institute of Physics, London, 1975), pp. 178-184.
Paper C005
6 E.G. Sieverts and C.A.J. Ammerlaan,
"Electron paramagnetic resonance of new defects in heavily phosphorus-doped silicon after
electron irradiation",
Radiation Effects in Semiconductors 1976 (Institute of Physics, Bristol, 1977), pp. 213-220.
Paper C006
7 C.A.J. Ammerlaan and C. Weigel,
"Extended-Hückel-theory calculation of hyperfine interactions of the positive divacancy in silicon", Radiation Effects in Semiconductors 1976 (Institute of Physics, Bristol, 1977), pp. 448-457.
Paper C007
8 C. Weigel und C.A.J. Ammerlaan,
"Iterative LCAO-Rechnungen für die Positiv geladene Doppelleerstelle in Silizium",
Verhandlungen DPG (VI) 13, 161-162 (1978).
Paper C008
9 R.H. van der Linde and C.A.J. Ammerlaan,
"Reorientations of divacancies in silicon",
Defects and Radiation Effects in Semiconductors 1978 (Institute of Physics, Bristol, 1979),
pp. 242-247.
Paper C009
10 S.H. Muller, E.G. Sieverts and C.A.J. Ammerlaan,
"An EPR observation of changes in heat-treatment centres in oxygen-rich silicon",
Defects and Radiation Effects in Semiconductors 1978 (Institute of Physics, Bristol, 1979),
pp. 297-302.
Paper C010
11 C.A.J. Ammerlaan and L.J. van Ruyven,
"An EPR study of substitutional phosphorus in neutron transmutation doped silicon",
European Solid State Device Research Conference 1978, pp. 360-362.
Paper C011
12 C.A.J. Ammerlaan and E.A. Burgemeister,
"Stress-induced reorientations of nitrogen in diamond",
Proceedings Diamond Conference, Cambridge, U.K. (1979), pp. 27-29.
Paper C012
13 E.A. Burgemeister and C.A.J. Ammerlaan,
"Thermal conductivities of electron irradiated diamonds",
Proceedings Diamond Conference, Cambridge, U.K. (1979), pp. 66-68.
Paper C013
14 S.H. Muller, H.G. Arnold, J.J. de Graaf, G.M. Tuynman and C.A.J. Ammerlaan,
"Defects in electron-irradiated iron-doped silicon",
Radiation Physics of Semiconductors and Related Materials (Tbilisi State University Press,
Tbilisi, 1980), pp. 288-295.
Paper C014
15 E.A. Burgemeister, C.A.J. Ammerlaan and G. Davies,
"Thermal and optical measurements on vacancies in type IIa diamond",
Proceedings Diamond Conference, Bristol, U.K. (1980), pp. 23-24.
Paper C015
16 C.A.J. Ammerlaan and E.A. Burgemeister,
"The Jahn-Teller effect of nitrogen in diamond",
Proceedings Diamond Conference, Bristol, U.K. (1980), pp. 50-51.
Paper C016
17 C.A.J. Ammerlaan,
"Electron paramagnetic resonance studies of native defects in diamond",
Defects and Radiation Effects in Semiconductors 1980 (Institute of Physics, Bristol, 1981), pp. 81-94.
Paper C017
18 C.A.J. Ammerlaan,
"Electron paramagnetic resonance of boron in diamond",
Proceedings Diamond Conference, Reading, U.K. (1981), pp. 33-34.
Paper C018
19 C.A.J. Ammerlaan,
"Centra in halfgeleiders",
FOM Jaarboek 1982, pp. 159-165.
Paper C019
20 M. Sprenger, S.H. Muller and C.A.J. Ammerlaan,
"The negatively charged vacancy in silicon: hyperfine interactions from ENDOR measurements",
Physica 116B, 224-229 (1983).
Paper C020
21 C.A.J. Ammerlaan,
"Defect complexing in iron-doped silicon",
Defect Complexes in Semiconductor Structures (Springer, Berlin, 1983), pp. 111-119.
Paper C021
22 C.A.J. Ammerlaan,
"Deep-level defects in semiconductors: studies by magnetic resonance",
Revista Brasileira de Fisica, Volume Especial 1983, pp. 104-135.
Paper C022
23 C.A.J. Ammerlaan and R. van Kemp,
"Linewidth studies on the C:B electron paramagnetic resonance",
Proceedings Diamond Conference, Cambridge, U.K. (1983), pp. 96-101.
Paper C023
24 R. van Kemp and C.A.J. Ammerlaan,
"Electron paramagnetic resonance on shallow acceptor impurities in silicon",
Solid State Communications 53, 1135-1136 (1985).
Paper C024
25 M. Sprenger, R. van Kemp, E.G. Sieverts and C.A.J. Ammerlaan,
"Electron nuclear double resonance of the boron-vacancy complex in silicon",
Journal of Electronic Materials 14a, 815-822 (1985).
Paper C025
26 D.A. van Wezep and C.A.J. Ammerlaan,
"Electron paramagnetic resonance of titanium in silicon",
Journal of Electronic Materials 14a, 863-868 (1985).
Paper C026
27 C.A.J. Ammerlaan, M. Sprenger, R. van Kemp and D.A. van Wezep,
"Defect identification in silicon using electron nuclear double resonance",
Microscopic Identification of Electronic Defects in Semiconductors (Materials Research Society, Pittsburgh, 1985), pp. 227-235.
Paper C027
28 C.A.J. Ammerlaan and J.J. van Kooten,
"Electronic ground state of iron-acceptor pairs in silicon",
Microscopic Identification of Electronic Defects in Semiconductors (Materials Research Society, Pittsburgh, 1985), pp. 525-531.
Paper C028
29 T. Gregorkiewicz and C.A.J. Ammerlaan,
"Oxygen related mechanism of reverse annealing for boron implants in silicon",
Radiation Effects Letters 85, 249-254 (1985).
Paper C029
30 T. Gregorkiewicz, J.J. van Kooten and C.A.J. Ammerlaan,
"Thermal donors in boron-implanted Cz-silicon. Photoluminescence studies",
Acta Physica Polonica A 69, 389-392 (1986).
Paper C030
31 E.G. Sieverts, D.A. van Wezep, R. van Kemp and C.A.J. Ammerlaan,
"Electrons of 3d transition metals in silicon",
Materials Science Forum 10-12, 729-734 (1986).
Paper C031
32 R. van Kemp, E.G. Sieverts and C.A.J. Ammerlaan,
"The electronic structure of the oxygen-vacancy complex in silicon",
Materials Science Forum 10-12, 875-880 (1986).
Paper C032
33 D.A. van Wezep, T. Gregorkiewicz, H.H.P.Th. Bekman and C.A.J. Ammerlaan,
"Oxygen ENDOR of thermal donors in silicon",
Materials Science Forum 10-12, 1009-1014 (1986).
Paper C033
34 C.A.J. Ammerlaan, M. Sprenger and E.G. Sieverts,
"Identification of defects in silicon by EPR and ENDOR - the vacancy in silicon",
Defects in Crystals (World Scientific, Singapore, 1987), pp. 173-195.
Paper C034
35 C.A.J. Ammerlaan and T. Gregorkiewicz,
"Transition metal impurities in silicon",
New Developments in Semiconductor Physics (Springer, Berlin, 1988), pp. 244-261.
Paper C035
36 C.A.J. Ammerlaan, H.H.P.Th. Bekman and T. Gregorkiewicz,
"Oxygen-related thermal donors in silicon",
Defects in Crystals (World Scientific, Singapore, 1988), pp. 239-261.
Paper C036
37 A.B. van Oosten, N. T. Son, L.S. Vlasenko and C.A.J. Ammerlaan,
"The electronic structure of platinum, palladium and nickel in silicon",
Materials Science Forum 38-41, 355-359 (1989).
Paper C037
38 T. Gregorkiewicz, H.H.P.Th. Bekman and C.A.J. Ammerlaan,
"Heat-treatment centres and thermal donors in silicon",
Materials Science Forum 38-41, 595-599 (1989).
Paper C038
39 H.H.P.Th. Bekman, T. Gregorkiewicz and C.A.J. Ammerlaan,
"The NL10 thermal donor in silicon",
Materials Science Forum 38-41, 601-605 (1989).
Paper C039
40 T. Gregorkiewicz, H.H.P.Th. Bekman and C.A.J. Ammerlaan,
"Oxygen aggregation in silicon - EPR and ENDOR studies",
Acta Physica Polonica A 75, 89-100 (1989).
Paper C040
41 C.A.J. Ammerlaan, T. Gregorkiewicz and H.H.P.Th. Bekman,
"The structure of the NL10 thermal donor in silicon",
Shallow Impurities in Semiconductors 1988 (Institute of Physics, Bristol, 1989), pp. 191-200.
Paper C041
42 E.G. Sieverts and C.A.J. Ammerlaan,
"Distant dipole-dipole interactions and the structure of defects and impurities in silicon",
Radiation Effects and Defects in Solids 111 & 112, 13-27 (1989).
Paper C042
43 C.A.J. Ammerlaan,
"Formation and structure of iron-impurity complexes in silicon",
Solid State Phenomena 6 & 7, 591-602 (1989).
Paper C043
44 C.A.J. Ammerlaan and A.B. van Oosten,
"Complex formation of transition element impurities in silicon",
Defect Control in Semiconductors (North-Holland, Amsterdam, 1990), pp. 279-290.
Paper C044
45 H.E. Altink, N.T. Bagraev, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Metastability of zinc-related centres in silicon: photo-EPR study",
The Physics of Semiconductors (World Scientific, Singapore, 1990), pp. 589-592.
Paper C045
46 N.T. Bagraev, H.H.P.Th. Bekman, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Photo-EPR investigations of thermal donors in silicon",
Acta Physica Polonica A 79, 397-400 (1991).
Paper C046
47 B.J. Heijmink Liesert, M. Godlewski, T. Gregorkiewicz, C.A.J. Ammerlaan and E. Goldys,
"Neutron transmutation doped GaP: optically detected magnetic resonance studies",
Acta Physica Polonica A 79, 401-404 (1991).
Paper C047
48 C.A.J. Ammerlaan,
"Optical absorption of doped semiconductors",
Semiconductors and Rare Earth Based Materials (World Scientific, Singapore, 1991), pp. 3-17.
Paper C048
49 C.A.J. Ammerlaan and H.E. Altink,
"Zinc and zinc-impurity pairs in silicon",
Solid State Phenomena 19&20, 639-650 (1991).
Paper C049
50 T. Gregorkiewicz, H.E. Altink and C.A.J. Ammerlaan,
"Characterization of defect centres in semiconductors by advanced ENDOR techniques",
Acta Physica Polonica A 80, 161-170 (1991).
Paper C050
51 B.J. Heijmink Liesert, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Silicon thermal donors: photoluminescence and magnetic resonance study of boron- and aluminum-doped silicon",
Materials Science Forum 83-87, 407-412 (1992).
Paper C051
52 M. Godlewski, B.J. Heijmink Liesert, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Optically detected cyclotron resonance studies of erbium and ytterbium doped InP",
Materials Science Forum 83-87, 683-688 (1992).
Paper C052
53 S.J.C.H.M. van Gisbergen, A.A. Ezhevskii, M. Godlewski, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Interstitial and substitutional Mn in GaAs and GaP: magnetic resonance studies",
Materials Science Forum 83-87, 701-706 (1992).
Paper C053
54 P. Stallinga, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Electron paramagnetic resonance study of new centres in SiC",
Materials Science and Engineering B11, 35-38 (1992).
Paper C054
55 H.E. Altink, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Donor-acceptor pairs in silicon",
Defect Engineering in Semiconductor Growth, Processing and Device Technology (Materials Research Society, Pittsburgh, 1992), pp. 525-536.
Paper C055
56 M. Godlewski, M. Surma, R.R. Galazka, N.T. Khoi, S.J.C.H.M. van Gisbergen, T. Gregorkiewicz
and C.A.J. Ammerlaan,
"Mechanism of optical detection of magnetic resonance in Cd1-xMnxTe",
Acta Physica Polonica A 82, 717-720 (1992).
Paper C056
57 L.S. Vlasenko, Yu.V. Martynov, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Photo-electrical EPR of the excited triplet states of structural defects in irradiated silicon",
The Physics of Semiconductors (World Scientific, Singapore, 1992), pp. 1641-1644.
Paper C057
58 N.T. Son, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Identification of paramagnetic silver centres in silicon",
The Physics of Semiconductors (World Scientific, Singapore, 1992), pp. 1685-1688.
Paper C058
59 C.A.J. Ammerlaan and T. Gregorkiewicz,
"Electronic states of thermal donors in semiconductors",
Materials Science Forum 117-118, 9-16 (1993).
Paper C059
60 T. Gregorkiewicz, H.H.P.Th. Bekman, C.A.J. Ammerlaan, W. Knap, L.C. Brunel and G. Martinez,
"High-resolution EPR spectroscopy of the Si-NL10 thermal donor",
Materials Science Forum 117-118, 521-522 (1993).
Paper C060
61 T. Gregorkiewicz, B.J. Heijmink Liesert, I. Tsimperidis, I. de Maat-Gersdorf, C.A.J. Ammerlaan,
M. Godlewski and F. Scholz,
"Excitation and de-excitation mechanisms of rare-earth ions in III-V compounds: optically detected microwave-induced impact ionization of Yb dopant in InP",
Rare-Earth Doped Semiconductors (Materials Research Society, Pittsburgh, 1993), pp. 239-250.
Paper C061
62 I. de Maat-Gersdorf, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Photoluminescence study of the 779-meV band in silver-doped silicon",
Materials Science Forum 143-147, 755-759 (1994).
Paper C062
63 P. Stallinga, T. Gregorkiewicz, C.A.J. Ammerlaan and Yu.V. Gorelkinskii,
"EPR identification of hydrogen molecules in bulk silicon",
Materials Science Forum 143-147, 853-860 (1994).
Paper C063
64 M. Höhne, U. Juda, Yu.V. Martynov, T. Gregorkiewicz, C.A.J. Ammerlaan and L.S. Vlasenko,
"EPR study of platinum-hydrogen complexes in silicon",
Materials Science Forum 143-147, 1659-1663 (1994).
Paper C064
65 I. de Maat-Gersdorf, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Pseudodonor character of silver in silicon",
Journal of Luminescence 60&61, 556-558 (1994).
Paper C065
66 P. Stallinga, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Trapping of molecular hydrogen in porous silicon and at Si/SiO2 interfaces and a possible reinterpretation of the Pb center",
Diagnostic Techniques for Semiconductor Materials Processing (Materials Research Society, Pittsburgh, 1994), pp. 385-390.
Paper C066
67 M. Godlewski, R.R. Galazka, I. Tsimperidis, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Free carriers heating at Mn2+ magnetic resonance in CdMnTe",
Acta Physica Polonica A 87, 177-180 (1995).
Paper C067
68 P. Stallinga, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Investigation of the Si-NL52/Pb defect in bulk silicon",
The Physics of Semiconductors (World Scientific, Singapore, 1995), pp. 2235-2238.
Paper C068
69 I. de Maat-Gersdorf, T. Gregorkiewicz, C.A.J. Ammerlaan and N.A. Sobolev,
"Photoluminescence measurements on erbium-doped silicon",
Semiconductor Science and Technology 10, 666-671 (1995).
Paper C069
70 T. Gregorkiewicz, I.S. Zevenbergen, Yu.V. Martynov and C.A.J. Ammerlaan,
"Paramagnetic state of hydrogen-passivated double-donor centers in silicon",
Acta Physica Polonica A 88, 735-738 (1995).
Paper C070
71 M. Godlewski, B. Monemar, T.G. Anderson, I. Tsimperidis, T. Gregorkiewicz, C.A.J. Ammerlaan,
J. Muszalski and M. Kaniewska,
"Optically detected cyclotron resonance studies of high electron mobility AlGaAs/GaAs structures",
Acta Physica Polonica A 88, 990-994 (1995).
Paper C071
72 I. Tsimperidis, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Excitation of rare earths in semiconductors by the excitonic Auger recombination",
Materials Science Forum 196-201, 591-595 (1995).
Paper C072
73 Yu.V. Martynov, T. Gregorkiewicz and C.A.J. Ammerlaan,
"ENDOR Identification of a hydrogen-passivated thermal donor",
Materials Science Forum 196-201, 849-853 (1995).
Paper C073
74 I.S. Zevenbergen, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Hydrogen passivation of the sulfur double donor in silicon investigated by EPR and ENDOR",
Materials Science Forum 196-201, 855-859 (1995).
Paper C074
75 D.T. Xuan Thao, T. Gregorkiewicz, C.A.J. Ammerlaan, N.N. Long, L.K. Binh, F.P. Widdershoven,
P. Christianen and J.C. Maan,
"Emitted light of erbium-doped float-zone silicon: a photoluminescence study",
Proceedings of the Second International Workshop on Materials Science (IWOMS'95), Hanoi, Vietnam, October 1995, pp. 561-564.
Paper C075
76 C.A.J. Ammerlaan, Yu.V. Martynov, I.S. Zevenbergen and T. Gregorkiewicz,
"Atomic and electronic structure of hydrogen-passivated double donors in silicon",
Proceedings of the Second International Workshop on Materials Science (IWOMS'95), Hanoi, Vietnam, October 1995, pp. 654-659.
Paper C076
77 I.S. Zevenbergen, Yu.V. Martynov, F. Berg Rasmussen, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Magnetic resonance spectroscopy of hydrogen-passivated double donors in silicon",
Materials Science and Engineering B36, 138-141 (1996).
Paper C077
78 C.A.J. Ammerlaan, P.N. Hai and T. Gregorkiewicz,
"Pseudo-Zeeman factors for transition ions in silicon",
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, Alexandr I. Ryskin and Vadim F. Masterov, Editors, Proceedings SPIE, Volume 2706,
305-314 (1996)
Paper C078
79 Yu.V. Martynov, I.S. Zevenbergen, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Hydrogen passivation of double donors in silicon",
Solid State Phenomena 47-48, 267-274 (1996).
Paper C079
80 C.A.J. Ammerlaan, I.S. Zevenbergen, Yu.V. Martynov and T. Gregorkiewicz,
"Magnetic resonance investigations of thermal donors in silicon",
Early Stages of Oxygen Precipitation in Silicon (Kluwer, Dordrecht, 1996), pp. 61-82.
Paper C080
81 M. Godlewski, A. Wittlin, R.R. Galazka, B. Monemar, T. Gregorkiewicz, C.A.J. Ammerlaan,
P.H.M. van Loosdrecht and J.A.A.J. Perenboom,
"Optically studied spin relaxation processes in CdMnTe",
The Physics of Semiconductors (World Scientific, Singapore, 1996), pp. 393-396.
Paper C081
82 I. Tsimperidis, T. Gregorkiewicz and C.A.J. Ammerlaan,
"The role of free carriers in the luminescence of rare earth ions in semiconducting hosts",
The Physics of Semiconductors (World Scientific, Singapore, 1996), pp. 3057-3060.
Paper C082
83 I. de Maat-Gersdorf, T. Gregorkiewicz, C.A.J. Ammerlaan, P.C.M. Christianen and J.C. Maan,
"The 4f intrashell transitions of ytterbium in indium phosphide",
Rare Earth Doped Semiconductors II (Materials Research Society, Pittsburgh, 1996), pp. 161-166.
Paper C083
84 T. Gregorkiewicz, I. Tsimperidis, C.A.J. Ammerlaan, F.P. Widdershoven and N.A. Sobolev,
"Excitation and de-excitation of Yb3+ in InP and Er3+ in Si: photoluminescence and impact
ionization studies",
Rare Earth Doped Semiconductors II (Materials Research Society, Pittsburgh, 1996), pp. 207-218.
Paper C084
85 A.A. Ezhevskii and C.A.J. Ammerlaan,
"Reactions of interstitial iron with shallow acceptors in silicon",
Shallow-Level Centers in Semiconductors, edited by C.A.J. Ammerlaan and B. Pajot (World
Scientific, Singapore, 1997), pp. 345-350.
Paper C085
86 M. Bercu, I.S. Zevenbergen, T. Gregorkiewicz, C.A.J. Ammerlaan, T. Tate and E. Ivanov,
"Annealing behavior of crystalline silicon heavily implanted with oxygen at low temperature",
Shallow-Level Centers in Semiconductors, edited by C.A.J. Ammerlaan and B. Pajot (World
Scientific, Singapore, 1997), pp. 405-410.
Paper C086
87 A.A. Ezhevskii and C.A.J. Ammerlaan,
"On the role of closely placed excited states in the anomalous behaviour of the spin system
Fe3+ in GaAs",
Shallow-Level Centers in Semiconductors, edited by C.A.J. Ammerlaan and B. Pajot (World
Scientific, Singapore, 1997), pp. 459-464.
Paper C087
88 R.E. Pritchard, M.J. Ashwin, J.H. Tucker, R.C. Newman, E.C. Lightowlers, T. Gregorkiewicz, I.S. Zevenbergen, C.A.J. Ammerlaan, R. Falster and M.J. Binns,
"Shallow thermal donors associated with H, Al and N in annealed Czochralski silicon distinguished by infrared spectroscopy",
Semiconductor Science and Technology 12, 1404-1408 (1997).
Paper C088
89 R. Dirksen, F. Berg Rasmussen, T. Gregorkiewicz and C.A.J. Ammerlaan,
"High-field EPR spectroscopy of thermal donors in silicon",
Materials Science Forum 258-263, 373-378 (1997).
Paper C089
90 R.C. Newman, M.J. Ashwin, R.E. Pritchard, J.H. Tucker, E.C. Lightowlers, T. Gregorkiewicz,
I.S. Zevenbergen, C.A.J. Ammerlaan, R. Falster and M.J. Binns,
"Shallow thermal donors in annealed CZ silicon and links to the NL10 EPR spectrum: the relevance
of H, Al and N impurities",
Materials Science Forum 258-263, 379-384 (1997).
Paper C090
91 P.N. Hai, T. Gregorkiewicz, C.A.J. Ammerlaan and D.T. Don,
"Isolated substitutional silver and silver-induced defects in silicon: an electron paramagnetic resonance investigation",
Materials Science Forum 258-263, 491-496 (1997).
Paper C091
92 I. Tsimperidis, T. Gregorkiewicz, H.H.P.Th. Bekman, C.J.G.M. Langerak and C.A.J. Ammerlaan,
"Photoluminescence study of erbium in silicon with a free-electron laser",
Materials Science Forum 258-263, 1497-1502 (1997).
Paper C092
93 P. Kaczor, L. Dobaczewski, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Formation kinetics of the Al-related shallow thermal donors: a probe for oxygen diffusion in silicon",
Materials Science Forum 258-263, 1761-1766 (1997).
Paper C093
94 C.A.J. Ammerlaan, I.S. Zevenbergen and T. Gregorkiewicz,
"Passivation of electronic centres in silicon by hydrogen",
Physics of Semiconductor Devices (Narosa Publishing House, New Delhi, 1998), pp. 531-538.
Paper C094
95 J. Bollmann, S. Lindner, E. Alves, J. Soares, C.A.J. Ammerlaan, M. Deicher, M.H. Knopf, R. Magerle, A. Stötzler, M.O. Henry, E. McGlynn, A. Burchard, D. Forkel-Wirth, M. Fanciulli and G. Weyer,
"Identification of deep states from Au/Pt/Ir/Os impurities in silicon using radioactive transmutation",
The Physics of Semiconductors, edited by D. Gershoni (World Scientific, Singapore, 1999),
paper VIII-B-11, pp. 1-4
Paper C095
96 C.A.J. Ammerlaan, D.T.X. Thao, T. Gregorkiewicz, B.A. Andreev and Z.F. Krasil'nik,
"Photoluminescence of erbium-doped silicon: temperature dependence",
Solid State Phenomena 69-70, 359-364 (1999).
Paper C096
97 C.A.J. Ammerlaan and P.T. Huy,
"Atomic structure of chalcogen-hydrogen complexes in silicon",
Solid State Phenomena 69-70, 583-588 (1999).
Paper C097
98 C.A.J. Ammerlaan and I. de Maat-Gersdorf,
"Spectroscopy of rare-earth doped semiconductors: energy levels of ytterbium in indium phosphide",
Trends in Materials Science and Technology, edited by F.F. Bekker, N.D. Chien, J.J.M. Franse,
T.D. Hien, N.T. Hien and N.P. Thuy (Hanoi National University Publishing House, Hanoi, 1999),
pp. 22-27.
Paper C098
99 P.T. Huy, C.A.J. Ammerlaan, T. Gregorkiewicz and D.T. Don,
"Hydrogen passivation of double donors in silicon: a comparison of selenium versus sulfur",
Trends in Materials Science and Technology, edited by F.F. Bekker, N.D. Chien, J.J.M. Franse,
T.D. Hien, N.T. Hien and N.P. Thuy (Hanoi National University Publishing House, Hanoi, 1999),
pp. 52-55.
Paper C099
100 D.T.X. Thao, C.A.J. Ammerlaan and T. Gregorkiewicz,
"Photoluminescence mechanism of erbium in silicon",
Trends in Materials Science and Technology, edited by F.F. Bekker, N.D. Chien, J.J.M. Franse,
T.D. Hien, N.T. Hien and N.P. Thuy (Hanoi National University Publishing House, Hanoi, 1999),
pp. 158-161.
Paper C100
101 P.T. Huy, C.A.J. Ammerlaan and T. Gregorkiewicz,
"Atomic and electronic structure of hydrogen-passivated double selenium donors in silicon",
Physica B 273-274, 239-242 (1999).
Paper C101
102 D.T.X. Thao, C.A.J. Ammerlaan and T. Gregorkiewicz,
"The photoluminescence mechanism of erbium in silicon: intensity dependence on excitation power and temperature",
Physica B 273-274, 338-341 (1999).
Paper C102
103 N.T. Son, P.N. Hai, P.T. Huy, T. Gregorkiewicz, C.A.J. Ammerlaan, J.L. Lindström, W.M. Chen,
B. Monemar and E. Janzén,
"Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC",
Physica B 273-274, 655-658 (1999).
Paper C103
104 B.J. Pawlak, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Confinement effects on phosphorus donors embedded in silicon nanocrystals",
Physica B 273-274, 938-943 (1999).
Paper C104
105 C.A.J. Ammerlaan and I. de Maat-Gersdorf,
"Energy levels of ytterbium in indium phosphide",
Physics of Semiconductor Devices, edited by V. Kumar and S.K. Agarwal (Allied Publishers Ltd,
New Delhi, 2000), pp. 119-126.
Paper C105
106 B.J. Pawlak, T. Gregorkiewicz and C.A.J. Ammerlaan,
"Alteration of band structure in Si nanocrystals",
Materials Science and Engineering C 15, 273-275 (2001).
Paper C106
107 P.T. Huy and C.A.J. Ammerlaan,
"Complexes of gold and platinum with hydrogen in silicon",
Physica B 302-303, 233-238 (2001).
Paper C107
108 C.A.J. Ammerlaan,
"Shallow-level centers in semiconductors - 2000",
Physica B 302-303, 425-434 (2001).
Paper C108
109 V.V. Emtsev, Jr., C.A.J. Ammerlaan, B.A. Andreev, V.V. Emtsev, G.A. Oganesyan, A. Misiukand
and C.A. Londos,
"Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure",
Journal of Materials Science: Materials in Electronics 12, 223-225 (2001).
Paper C109
110 V.V. Emtsev, Jr., C.A.J. Ammerlaan, B.A. Andreev, G.A. Oganesyan, D.S. Poloskin and N.A. Sobolev,
"Shallow donors in silicon coimplanted with rare-earth ions and oxygen",
Physica B 308-310, 350-353 (2001).
Paper C110
111 V.B. Shmagin, B.A. Andreev, E.N. Morozova, Z.F. Krasil'nik, D.I. Kryzhkov, V.P. Kuznetsov,
E.A. Uskova, C.A.J. Ammerlaan and G. Pensl,
"Electrically active centers in light emitting Si:Er/Si structures grown by the sublimation MBE method",
Physica B 308-310, 361-364 (2001).
Paper C111
112 C.A.J. Ammerlaan,
"Spectroscopic characterisation of the erbium impurity in crystalline semiconductors",
Physica B 308-310, 387-390 (2001).
Paper C112
113 P.T. Huy and C.A.J. Ammerlaan,
"Electronic and atomic structure of transition-metal–hydrogen complexes in silicon",
Physica B 308-310, 408-413 (2001).
Paper C113
114 V.V. Emtsev, Jr., C.A.J. Ammerlaan, B.A. Andreev, G.A. Oganesyan, D.S. Poloskin, E.I. Shek
and N.A. Sobolev,
"Thermal donors in silicon implanted with rare earth impurities",
Solid State Phenomena 82-84, 93-98 (2002).
Paper C114
115 P.T. Huy and C.A.J. Ammerlaan,
"Hydrogen interaction with transition metals in silicon, studied by electron paramagnetic resonance",
Solid State Phenomena 82-84, 133-138 (2002).
Paper C115
116 C.A.J. Ammerlaan and I. de Maat–Gersdorf,
"Spectroscopic characterisation of erbium impurity in crystalline silicon",
Solid State Phenomena 82-84, 657-662 (2002).
Paper C116
117 P.T. Huy, C.A.J. Ammerlaan and J. Weber,
"Hydrogen interaction with transition-metals impurities in silicon",
Physics and Engineering in Evolution (Hanoi University of Technology, Hanoi, 2002), pp. 128-131.
Paper C117
118 D.T.X. Thao, C.A.J. Ammerlaan and N.D. Chien,
"Photoluminescence mechanism of rare-earth erbium in silicon: influence of defect specifics and shallow centers",
Physics and Engineering in Evolution (Hanoi University of Technology, Hanoi, 2002), pp. 293-296.
Paper C118
119 V.V. Emtsev, Jr., C.A.J. Ammerlaan, V.V. Emtsev, G.A. Oganesyan, A. Misiuk, B. Surma,
A. Bukowski, C.A. Londos and M.S. Potsidi,
"Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon",
Proceedings International Conference on Solid State Crystals, October 14-18, 2002, Zakopane, Poland.
Paper C119
120 V.V. Emtsev, Jr., C.A.J. Ammerlaan, V.V. Emtsev, G.A. Oganesyan, B.A. Andreev, D.I. Kuritsyn,
A. Misiuk, B. Surma and C.A. Londos,
"Double thermal donors in Czochralski-grown silicon heat-treated under atmospheric and high hydrostatic pressures",
Physica Status Solidi (b) 235, 75-78 (2003).
Paper C120
121 C.A.J. Ammerlaan,
"Spectroscopic characterization of rare-earth impurities in crystals",
Romanian Conference on Advanced Materials, September 15-18, 2003, Constanta, Romania.
Paper C121
122 C.A.J. Ammerlaan,
"Spectroscopic properties of rare-earth dopants in semiconductors",
International Conference on Physics of Laser Crystals, September 25-30, 2005, Yalta, Crimea.
Paper C122
123 V.V. Emtsev Jr., C.A.J. Ammerlaan, A.A. Ezhevskii and A.V. Gusev,
"High-resolution magnetic-resonance spectroscopy of thermal donors in silicon",
Physica B 376-377, 45-49 (2006).
Paper C123
124 P.T. Huy, V.V. Thu, N.D. Chien, C.A.J. Ammerlaan and J. Weber,
"Structural and optical properties of Si-nanoclusters embedded in silicon dioxide",
Physica B 376-377, 868-871 (2006).
Paper C124

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